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Wenjie Mai

Wenjie Mai

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Office: Love Building room 162
Telephone: N/A
Fax: 404-894-9140
Email: gtg091n@mail.gatech.edu
Mailing Address: School of Materials Science and Engineering
Georgia Institute of Technology
771 Ferst Dr. N.W.
Atlanta, GA 30332
Biosketch | Research Area | Publications | Highlights | Honors

Biosketch

  • Ph.D. in Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, USA, 2005-2008
  • Master of Science in Physics, Georgia Institute of Technology, Atlanta, GA, USA, 2003-2005.
  • Intern, Institute of Physics, Chinese Academy of Sciences, Beijing, China, 2001-2003.
  • Bachelor of Science in Physics, Peking University, Beijing, China, 1998-2002.

Research Area

  • Participated in the fabrication and characterization project on ZnO superlattice-structured nanohelices, which is published in Science 2005, 309, 1700 & Nano Letters 2006, 6, 2536.
  • Developed new physical and statistical methods to quantify elastic deflection and obtain Young’s modulus of one-dimensional nanowires by atomic force microscope (AFM).
  • Designed, fabricated, and functionalized ZnO nanowire based nanodevices such as field effect transistors (FET), ultraviolet (UV) sensors, gas sensors, and solar cells.
  • Established a manipulation and measurement system in a scanning electron microscope (SEM) chamber for electrical and mechanical measurement on nanomaterials.
  • Investigated the size dependence of the elastic properties of ZnO nanobelts.
  • Optimized growth condition of vertical-aligned ZnO nanowire arrays on SiC and GaN substrates.

Publications

  1. "A Statistical Approach to Quantifying the Mechanical Property of Nanomaterials", X.W.Deng, R.S.Vengazhiyil, C.F.Wu, W.J.Mai, and Z.L.Wang, (In preparation).
  2. "Co-doped Y-shape ZnO nanostructures: synthesis, structure and properties", X.M. Zhang, W.J. Mai, Y.Zhang, Y.Ding and Z.L.Wang, (Submitted).

Research Highlights

Honors & Awards